Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Red’ko, R., Red’ko, S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118127
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ.

To study the influence of microwave irradiation on a spectrum of defect states
 in porous InP, we have measured the luminescence spectra within the range 0.50 to
 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
 operation chamber of a ma...