Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
We used the method of nets to calculate the thermoelastic stresses on the GaAs
 surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
 with diffraction spatial intensity modulation from a shield with rectangular cut. The
 structure of irradiate...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118129 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | We used the method of nets to calculate the thermoelastic stresses on the GaAs
surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
with diffraction spatial intensity modulation from a shield with rectangular cut. The
structure of irradiated subsurface layers of samples was studied by the AFM method. A
periodic islet structure formed in the process of diffusive redistribution of defects was
revealed by the level-by-level chemical etching.
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| ISSN: | 1560-8034 |