Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of s...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118129 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
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Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. 2017-05-28T18:01:26Z 2017-05-28T18:01:26Z 2007 Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.10.-W https://nasplib.isofts.kiev.ua/handle/123456789/118129 We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| spellingShingle |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| title_short |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_fullStr |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full_unstemmed |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_sort |
periodic subsurface structures in gaas formed by spatially modulated nanosecond pulse laser irradiation |
| author |
Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| author_facet |
Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We used the method of nets to calculate the thermoelastic stresses on the GaAs
surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
with diffraction spatial intensity modulation from a shield with rectangular cut. The
structure of irradiated subsurface layers of samples was studied by the AFM method. A
periodic islet structure formed in the process of diffusive redistribution of defects was
revealed by the level-by-level chemical etching.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118129 |
| citation_txt |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
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| first_indexed |
2025-12-07T17:18:39Z |
| last_indexed |
2025-12-07T17:18:39Z |
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