Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
We used the method of nets to calculate the thermoelastic stresses on the GaAs
 surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
 with diffraction spatial intensity modulation from a shield with rectangular cut. The
 structure of irradiate...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118129 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709585014423552 |
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| author | Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| author_facet | Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| citation_txt | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We used the method of nets to calculate the thermoelastic stresses on the GaAs
surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
with diffraction spatial intensity modulation from a shield with rectangular cut. The
structure of irradiated subsurface layers of samples was studied by the AFM method. A
periodic islet structure formed in the process of diffusive redistribution of defects was
revealed by the level-by-level chemical etching.
|
| first_indexed | 2025-12-07T17:18:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118129 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:18:39Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. 2017-05-28T18:01:26Z 2017-05-28T18:01:26Z 2007 Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.10.-W https://nasplib.isofts.kiev.ua/handle/123456789/118129 We used the method of nets to calculate the thermoelastic stresses on the GaAs
 surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
 with diffraction spatial intensity modulation from a shield with rectangular cut. The
 structure of irradiated subsurface layers of samples was studied by the AFM method. A
 periodic islet structure formed in the process of diffusive redistribution of defects was
 revealed by the level-by-level chemical etching. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Article published earlier |
| spellingShingle | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| title | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_fullStr | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full_unstemmed | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_short | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_sort | periodic subsurface structures in gaas formed by spatially modulated nanosecond pulse laser irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118129 |
| work_keys_str_mv | AT moscalds periodicsubsurfacestructuresingaasformedbyspatiallymodulatednanosecondpulselaserirradiation AT fedorenkoll periodicsubsurfacestructuresingaasformedbyspatiallymodulatednanosecondpulselaserirradiation AT yusupovmm periodicsubsurfacestructuresingaasformedbyspatiallymodulatednanosecondpulselaserirradiation AT golodenkomm periodicsubsurfacestructuresingaasformedbyspatiallymodulatednanosecondpulselaserirradiation |