Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

We have estimated the frequency characteristics of a photodiode determined
 by the motion of charge carriers in the space-charge region on the surface generation of
 carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The
 expressions allowing the co...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2007
ISSN:1560-8034
Hauptverfasser: Danilyuk, A.I., Dobrovolskiy, Yu.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118132
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:We have estimated the frequency characteristics of a photodiode determined
 by the motion of charge carriers in the space-charge region on the surface generation of
 carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The
 expressions allowing the comparison of photodiodes with different constructions have
 been obtained.
ISSN:1560-8034