Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films

With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on physico-technological conditions of their fabrication and annealing is determi...

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Bibliographic Details
Date:2007
Main Authors: Kosyak, V.V., Opanasyuk, A.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118133
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films / V.V. Kosyak, A.S. Opanasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 95-102. — Бібліогр.: 21 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine