Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Kosyak, V.V., Opanasyuk, A.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118133
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films / V.V. Kosyak, A.S. Opanasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 95-102. — Бібліогр.: 21 назв. — англ.

With the use of expressions obtained from the “first principles”, the ensemble
 of point defects was calculated, and the location of a Fermi level in undoped cadmium
 telluride single crystals and thin films depending on physico-technological conditions of
 their fabrication...