Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Hashim, U., Ayub, R.M., On, K.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118146
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell / U. Hashim, R.M. Ayub, K.S. On // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 112-117. — Бібліогр.: 7 назв. — англ.

The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell i...