Properties of CdTe thin films prepared by hot wall epitaxy
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-volta...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118156 |
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| Zitieren: | Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. 2017-05-28T19:00:33Z 2017-05-28T19:00:33Z 2004 Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/118156 CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of CdTe thin films prepared by hot wall epitaxy Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Properties of CdTe thin films prepared by hot wall epitaxy |
| spellingShingle |
Properties of CdTe thin films prepared by hot wall epitaxy Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| title_short |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_fullStr |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full_unstemmed |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_sort |
properties of cdte thin films prepared by hot wall epitaxy |
| author |
Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| author_facet |
Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118156 |
| fulltext |
|
| citation_txt |
Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
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2025-11-24T11:37:45Z |
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