Properties of CdTe thin films prepared by hot wall epitaxy
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-volta...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118156 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862536577433993216 |
|---|---|
| author | Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| author_facet | Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| citation_txt | Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.
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| first_indexed | 2025-11-24T11:37:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118156 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T11:37:45Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. 2017-05-28T19:00:33Z 2017-05-28T19:00:33Z 2004 Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/118156 CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of CdTe thin films prepared by hot wall epitaxy Article published earlier |
| spellingShingle | Properties of CdTe thin films prepared by hot wall epitaxy Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| title | Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full | Properties of CdTe thin films prepared by hot wall epitaxy |
| title_fullStr | Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full_unstemmed | Properties of CdTe thin films prepared by hot wall epitaxy |
| title_short | Properties of CdTe thin films prepared by hot wall epitaxy |
| title_sort | properties of cdte thin films prepared by hot wall epitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118156 |
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