Properties of CdTe thin films prepared by hot wall epitaxy

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• ISSN: 1560-8034
• Main Authors: Bilevych, Ye.O., Boka, A.I., Darchuk, L.O., Gumenjuk-Sichevska, J.V., Sizov, F.F., Boelling, O., Sulkio-Cleff, B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118156
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ.

CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-volta...