Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118157 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607091837960192 |
|---|---|
| author | Savchenko, N.D. Shchurova, T.N. Popovych, K.O. Rubish, I.D. Leising, G. |
| author_facet | Savchenko, N.D. Shchurova, T.N. Popovych, K.O. Rubish, I.D. Leising, G. |
| citation_txt | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo-potential methods. The energy values have been determined in the centre of the Brillouin zone. The atomic terms determined within Herman-Skillman and Hartree-Fock approximations have been used in the calculations. The quantitative agreement between theoretical and experimental data on the band gap and photoemission threshold for this type of materials has been shown. The energy values for the optical transitions have been determined (1.77; 2.41; 2.65 and 2.95 eV) and correlated with the experimental emission spectra for the samples processed under different conditions.
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| first_indexed | 2025-11-28T13:36:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118157 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T13:36:34Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Savchenko, N.D. Shchurova, T.N. Popovych, K.O. Rubish, I.D. Leising, G. 2017-05-28T19:01:24Z 2017-05-28T19:01:24Z 2004 Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 78.60.Fi, 71.15.Fv, 71.55.Gs https://nasplib.isofts.kiev.ua/handle/123456789/118157 The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo-potential methods. The energy values have been determined in the centre of the Brillouin zone. The atomic terms determined within Herman-Skillman and Hartree-Fock approximations have been used in the calculations. The quantitative agreement between theoretical and experimental data on the band gap and photoemission threshold for this type of materials has been shown. The energy values for the optical transitions have been determined (1.77; 2.41; 2.65 and 2.95 eV) and correlated with the experimental emission spectra for the samples processed under different conditions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors Article published earlier |
| spellingShingle | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors Savchenko, N.D. Shchurova, T.N. Popovych, K.O. Rubish, I.D. Leising, G. |
| title | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors |
| title_full | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors |
| title_fullStr | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors |
| title_full_unstemmed | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors |
| title_short | Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors |
| title_sort | simulation of the electronic states in the band gap for zns: cu, cl crystallophosphors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118157 |
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