Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors

The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
Hauptverfasser: Savchenko, N.D., Shchurova, T.N., Popovych, K.O., Rubish, I.D., Leising, G.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118157
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118157
record_format dspace
spelling Savchenko, N.D.
Shchurova, T.N.
Popovych, K.O.
Rubish, I.D.
Leising, G.
2017-05-28T19:01:24Z
2017-05-28T19:01:24Z
2004
Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ.
1560-8034
PACS: 78.60.Fi, 71.15.Fv, 71.55.Gs
https://nasplib.isofts.kiev.ua/handle/123456789/118157
The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo-potential methods. The energy values have been determined in the centre of the Brillouin zone. The atomic terms determined within Herman-Skillman and Hartree-Fock approximations have been used in the calculations. The quantitative agreement between theoretical and experimental data on the band gap and photoemission threshold for this type of materials has been shown. The energy values for the optical transitions have been determined (1.77; 2.41; 2.65 and 2.95 eV) and correlated with the experimental emission spectra for the samples processed under different conditions.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
spellingShingle Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
Savchenko, N.D.
Shchurova, T.N.
Popovych, K.O.
Rubish, I.D.
Leising, G.
title_short Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
title_full Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
title_fullStr Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
title_full_unstemmed Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors
title_sort simulation of the electronic states in the band gap for zns: cu, cl crystallophosphors
author Savchenko, N.D.
Shchurova, T.N.
Popovych, K.O.
Rubish, I.D.
Leising, G.
author_facet Savchenko, N.D.
Shchurova, T.N.
Popovych, K.O.
Rubish, I.D.
Leising, G.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo-potential methods. The energy values have been determined in the centre of the Brillouin zone. The atomic terms determined within Herman-Skillman and Hartree-Fock approximations have been used in the calculations. The quantitative agreement between theoretical and experimental data on the band gap and photoemission threshold for this type of materials has been shown. The energy values for the optical transitions have been determined (1.77; 2.41; 2.65 and 2.95 eV) and correlated with the experimental emission spectra for the samples processed under different conditions.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118157
citation_txt Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ.
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AT popovychko simulationoftheelectronicstatesinthebandgapforznscuclcrystallophosphors
AT rubishid simulationoftheelectronicstatesinthebandgapforznscuclcrystallophosphors
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first_indexed 2025-11-28T13:36:34Z
last_indexed 2025-11-28T13:36:34Z
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