Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Savchenko, N.D., Shchurova, T.N., Popovych, K.O., Rubish, I.D., Leising, G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118157
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors / N.D. Savchenko, T.N. Shchurova, K.O. Popovych, I.D. Rubish, G. Leising // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 133-137. — Бібліогр.: 24 назв. — англ.

The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation procedure has been based on the linear combination of atomic orbitals and pseudo...