RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures
Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is particularly important for the growth of high quality heterostructures. Indeed, unde...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118164 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 147-153. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695701060780032 |
|---|---|
| author | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| author_facet | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| citation_txt | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 147-153. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is particularly important for the growth of high quality heterostructures. Indeed, under such conditions, extremely uniform and high quality epitaxial devices become possible. RHEED intensity oscillation can be used as accurate, quick and direct measure of the growth rates and alloy compositions as well. Although analog signal could be obtained by using an optical fiber associated to a photo-detector PM tube and a plotter, this method is troublesome and limited. In some application, the availability of the intensity signal as a digital voltage is useful to realize further advanced analysis, and achieve feedback between growth dynamic and the external parameters, such as the cells temperatures and the synchronization of the shutters. In this paper we describe the advantages gained with the upgrade of our analog system into a digital package using CCD camera, frame grabber and a home made software. Its main purpose is to track RHEED intensity changes and measures the rate of oscillation. A state-of-the-art RHEED digital image analysis system gives us the necessary tools to gain insight into the thin film growth process and optimize material quality.
|
| first_indexed | 2025-12-07T16:25:54Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118164 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:25:54Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. 2017-05-29T05:24:33Z 2017-05-29T05:24:33Z 2004 RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 147-153. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 81.07.-b, 81.16.-c https://nasplib.isofts.kiev.ua/handle/123456789/118164 Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is particularly important for the growth of high quality heterostructures. Indeed, under such conditions, extremely uniform and high quality epitaxial devices become possible. RHEED intensity oscillation can be used as accurate, quick and direct measure of the growth rates and alloy compositions as well. Although analog signal could be obtained by using an optical fiber associated to a photo-detector PM tube and a plotter, this method is troublesome and limited. In some application, the availability of the intensity signal as a digital voltage is useful to realize further advanced analysis, and achieve feedback between growth dynamic and the external parameters, such as the cells temperatures and the synchronization of the shutters. In this paper we describe the advantages gained with the upgrade of our analog system into a digital package using CCD camera, frame grabber and a home made software. Its main purpose is to track RHEED intensity changes and measures the rate of oscillation. A state-of-the-art RHEED digital image analysis system gives us the necessary tools to gain insight into the thin film growth process and optimize material quality. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures Article published earlier |
| spellingShingle | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| title | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures |
| title_full | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures |
| title_fullStr | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures |
| title_full_unstemmed | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures |
| title_short | RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures |
| title_sort | rheed digital image analysis system for in-situ growth rate and alloy composition measurements of gaas-based nanostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118164 |
| work_keys_str_mv | AT sghaierh rheeddigitalimageanalysissystemforinsitugrowthrateandalloycompositionmeasurementsofgaasbasednanostructures AT bouzaienel rheeddigitalimageanalysissystemforinsitugrowthrateandalloycompositionmeasurementsofgaasbasednanostructures AT sfaxil rheeddigitalimageanalysissystemforinsitugrowthrateandalloycompositionmeasurementsofgaasbasednanostructures AT maarefh rheeddigitalimageanalysissystemforinsitugrowthrateandalloycompositionmeasurementsofgaasbasednanostructures |