RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118164
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 147-153. — Бібліогр.: 24 назв. — англ.

Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is particularly important for the growth of high quality heterostructures. Indeed, unde...