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RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures

Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is particularly important for the growth of high quality heterostructures. Indeed, unde...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118164
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 147-153. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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