Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Gritsenko, M.I., Kucheev, S.I., Lytvyn, P.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118165
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 154-156. — Бібліогр.: 9 назв. — англ.

In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with polarity +U on silicon is applied to the structure a passivation effect of silicon surface takes place. It is found that a silicon surface passivated by dielectric film changes an initial alignment of liquid crystal 5CB. In the structure with passivating silicon surface a frequency range of structure photosensitivity extends due to limitation of current leakage through Si/liquid crystal interface. Keywords: nematic, silicon, passivation, alignment, photosensitivity, light modulator.