Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures
In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2004 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118165 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 154-156. — Бібліогр.: 9 назв. — англ. |
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Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. 2017-05-29T05:25:34Z 2017-05-29T05:25:34Z 2004 Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 154-156. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 81.65.Rv https://nasplib.isofts.kiev.ua/handle/123456789/118165 In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with polarity +U on silicon is applied to the structure a passivation effect of silicon surface takes place. It is found that a silicon surface passivated by dielectric film changes an initial alignment of liquid crystal 5CB. In the structure with passivating silicon surface a frequency range of structure photosensitivity extends due to limitation of current leakage through Si/liquid crystal interface. Keywords: nematic, silicon, passivation, alignment, photosensitivity, light modulator. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures |
| spellingShingle |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. |
| title_short |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures |
| title_full |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures |
| title_fullStr |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures |
| title_full_unstemmed |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures |
| title_sort |
passivation of silicon surface by ultrathin dielectric film in m/si/nematic/ito structures |
| author |
Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. |
| author_facet |
Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with polarity +U on silicon is applied to the structure a passivation effect of silicon surface takes place. It is found that a silicon surface passivated by dielectric film changes an initial alignment of liquid crystal 5CB. In the structure with passivating silicon surface a frequency range of structure photosensitivity extends due to limitation of current leakage through Si/liquid crystal interface.
Keywords: nematic, silicon, passivation, alignment, photosensitivity, light modulator.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118165 |
| citation_txt |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 154-156. — Бібліогр.: 9 назв. — англ. |
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| first_indexed |
2025-12-07T16:46:11Z |
| last_indexed |
2025-12-07T16:46:11Z |
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