Influence of high hydrostatic pressure on energetic structure and electron-lattice coupling of transition metal and rare earth related centers in solids

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Grinberg, M., Barzowska, J., Gryk, W.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118171
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of high hydrostatic pressure on energetic structure and electron-lattice coupling of transition metal and rare earth related centers in solids / M. Grinberg, J. Barzowska, W. Gryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 180-184. — Бібліогр.: 30 назв. — англ.

We present the results of the photoluminescence of the crystals doped with transition metals or rare earth ions obtained under high hydrostatic pressure up to 300 kbar applied in diamond anvil cells (DAC). We have focused on Al₂O₃, YAlO₃ LLGG and YAG garnets and LiNbO₃, and LiTaO₃ perovskites doped with Cr³⁺, Ti³⁺ and Ce³⁺. We have observed the pressure induced red shift of the df emission in the case of materials doped with Ce and blue shift of the ⁴T₂⁴A₂ and ²E²T₂ emission in the case of materials doped with Cr³⁺ and Ti³⁺, respectively. Considering our experimental data we have calculated the local compresibilities of the materials and found that almost in all cases this quantity is smaller than compressibility of the bulk.