Sensor based on a non-ideal heterojunction to indicate X-ray images
The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is sensitive to soft X-ray radiation. Memory and accumulation of a signal at a ro...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118180 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Sensor based on a non-ideal heterojunction to indicate X-ray images / V.A. Smyntyna, V.A. Borschak, M.I. Kutalova, N.P. Zatovskaya, A.P. Balaban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 222-223. — Бібліогр.: 4 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is sensitive to soft X-ray radiation. Memory and accumulation of a signal at a room temperature, which is characteristic of the sensor at registration of images in visible light, take place for the images obtained in X-ray range, too, which makes it possible to apply such sensor in medicine and crystallography.
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| ISSN: | 1560-8034 |