Hydrogen gettering in annealed oxygen-implanted silicon

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I.V., Prujszczyk, M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118217
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ.

Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
 prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
 investigated after annealing of Si:O at temperatures up to 1570 K, including also
 processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
 conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
 produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
 hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
 accumulated in sub-surface region as well as within implantation-disturbed areas. It has
 been found that hydrogen was still present in Si:O,H structures formed by oxygen
 implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
 well as in SOI structures can be used for recognition of defects.