Hydrogen gettering in annealed oxygen-implanted silicon
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
 prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
 investigated after annealing of Si:O at temperatures up to 1570 K, including also
 processing under enhanced...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118217 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732635519844352 |
|---|---|
| author | Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
| author_facet | Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
| citation_txt | Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
investigated after annealing of Si:O at temperatures up to 1570 K, including also
processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
accumulated in sub-surface region as well as within implantation-disturbed areas. It has
been found that hydrogen was still present in Si:O,H structures formed by oxygen
implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
well as in SOI structures can be used for recognition of defects.
|
| first_indexed | 2025-12-07T19:33:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118217 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:33:10Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. 2017-05-29T12:56:29Z 2017-05-29T12:56:29Z 2010 Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 52.40.Hf, 61.05.C-, 68.37.Ps, 82.80.Ms https://nasplib.isofts.kiev.ua/handle/123456789/118217 Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
 prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
 investigated after annealing of Si:O at temperatures up to 1570 K, including also
 processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
 conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
 produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
 hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
 accumulated in sub-surface region as well as within implantation-disturbed areas. It has
 been found that hydrogen was still present in Si:O,H structures formed by oxygen
 implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
 well as in SOI structures can be used for recognition of defects. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hydrogen gettering in annealed oxygen-implanted silicon Article published earlier |
| spellingShingle | Hydrogen gettering in annealed oxygen-implanted silicon Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
| title | Hydrogen gettering in annealed oxygen-implanted silicon |
| title_full | Hydrogen gettering in annealed oxygen-implanted silicon |
| title_fullStr | Hydrogen gettering in annealed oxygen-implanted silicon |
| title_full_unstemmed | Hydrogen gettering in annealed oxygen-implanted silicon |
| title_short | Hydrogen gettering in annealed oxygen-implanted silicon |
| title_sort | hydrogen gettering in annealed oxygen-implanted silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118217 |
| work_keys_str_mv | AT misiuka hydrogengetteringinannealedoxygenimplantedsilicon AT barcza hydrogengetteringinannealedoxygenimplantedsilicon AT ulyashina hydrogengetteringinannealedoxygenimplantedsilicon AT antonovaiv hydrogengetteringinannealedoxygenimplantedsilicon AT prujszczykm hydrogengetteringinannealedoxygenimplantedsilicon |