Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
Effect of post-growth thermal annealing within the temperature range 200 to
 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD)
 heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an
 increase by...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118218 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of thermal annealing on the luminescent characteristics
 of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862651670948741120 |
|---|---|
| author | Borkovska, L.V. Stara, T.R. Korsunska, N.O. Pechers’ka, К.Yu. Germash, L.P. Bondarenko, V.O. |
| author_facet | Borkovska, L.V. Stara, T.R. Korsunska, N.O. Pechers’ka, К.Yu. Germash, L.P. Bondarenko, V.O. |
| citation_txt | Effect of thermal annealing on the luminescent characteristics
 of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Effect of post-growth thermal annealing within the temperature range 200 to
430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD)
heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an
increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the
first being caused by excitonic transitions in QDs and the second one being connected
with the defect complex including a column II vacancy. The effect is supposed to be
caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures
(Tann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up
to 100 meV blue shift of its peak position. The former is explained by generation of
extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС
is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD
density. It is found that the energy of excitonic transitions in the wetting layer does not
change upon annealing. Lower thermal stability of QDs as compared to that of the
wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via
vacancies. The presence of column II vacancies in the wetting layer is proved by
characteristics of defect-related PL band and its excitation spectra.
|
| first_indexed | 2025-12-01T20:34:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118218 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T20:34:11Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borkovska, L.V. Stara, T.R. Korsunska, N.O. Pechers’ka, К.Yu. Germash, L.P. Bondarenko, V.O. 2017-05-29T12:58:56Z 2017-05-29T12:58:56Z 2010 Effect of thermal annealing on the luminescent characteristics
 of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. 1560-8034 PACS 66.30.Pa, 78.55.Et, 78.67.Hc https://nasplib.isofts.kiev.ua/handle/123456789/118218 Effect of post-growth thermal annealing within the temperature range 200 to
 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD)
 heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an
 increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the
 first being caused by excitonic transitions in QDs and the second one being connected
 with the defect complex including a column II vacancy. The effect is supposed to be
 caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures
 (Tann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up
 to 100 meV blue shift of its peak position. The former is explained by generation of
 extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС
 is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD
 density. It is found that the energy of excitonic transitions in the wetting layer does not
 change upon annealing. Lower thermal stability of QDs as compared to that of the
 wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via
 vacancies. The presence of column II vacancies in the wetting layer is proved by
 characteristics of defect-related PL band and its excitation spectra. The authors would like to acknowledge Prof. Yu.G.
 Sadofyev from P.N. Lebedev Physical Institute of RAS,
 Moscow, Russia for growing the investigated structure. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure Article published earlier |
| spellingShingle | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure Borkovska, L.V. Stara, T.R. Korsunska, N.O. Pechers’ka, К.Yu. Germash, L.P. Bondarenko, V.O. |
| title | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure |
| title_full | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure |
| title_fullStr | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure |
| title_full_unstemmed | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure |
| title_short | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure |
| title_sort | effect of thermal annealing on the luminescent characteristics of cdse/znse quantum dot heterostructure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118218 |
| work_keys_str_mv | AT borkovskalv effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure AT staratr effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure AT korsunskano effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure AT pecherskakyu effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure AT germashlp effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure AT bondarenkovo effectofthermalannealingontheluminescentcharacteristicsofcdseznsequantumdotheterostructure |