Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Borkovska, L.V., Stara, T.R., Korsunska, N.O., Pechers’ka, К.Yu., Germash, L.P., Bondarenko, V.O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118218
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ.

Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the inten...