Scanning-tunneling microscopy/spectroscopy and break-junction tunneling spectroscopy of FeSe₁–xTex

The iron-chalcogenide superconductor FeSe₁–xTex (0.5 < x < 1) was investigated by scanning-tunneling microscopy/
 spectroscopy (STM/STS) and break-junction techniques. In the STM topography of the samples, randomly
 distributed Te and Se surface atomic structure pattern...

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Published in:Физика низких температур
Date:2013
Main Authors: Ekino, T., Sugimoto, A., Gabovich, A.M.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118228
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Scanning-tunneling microscopy/spectroscopy and break-junction tunneling spectroscopy of FeSe₁–xTex / T. Ekino, A. Sugimoto, A.M. Gabovich // Физика низких температур. — 2013. — Т. 39, № 3. — С. 343–353. — Бібліогр.: 50 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The iron-chalcogenide superconductor FeSe₁–xTex (0.5 < x < 1) was investigated by scanning-tunneling microscopy/
 spectroscopy (STM/STS) and break-junction techniques. In the STM topography of the samples, randomly
 distributed Te and Se surface atomic structure patterns correlate well with the bulk composition, demonstrating
 that nanoscale surface features directly reflect bulk properties. The high-bias STS measurements
 clarified the gap-like structure at ≈ 100–300 meV, which is consistent with the break-junction data. These highenergy
 structures were also found in sulfur substituted FeS₀.₁Te₀.₉. Possible origin of such spectral peculiarities
 is discussed. The superconducting gap 2Δ ≈ 3.4 ± 0.2 meV at temperature T = 4.2 K was found in the break junction
 of FeSe₁–xTex with the critical temperature Tc ≈ 10 K. The corresponding characteristic gap to Tc ratio
 2Δ/kBTc ≈ 4 ± 0.2 indicates moderate superconducting coupling (kB is the Boltzmann constant).
ISSN:0132-6414