Model of heterotransistor with quantum dots
Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Heterostructure transistors with quantum dots (QD) are now very perspective
devices because of their higher velocities of electrons in the channel. Simulation results
for concentration and carrier velocity distributions depending on the QD size,
concentration and location were presented in this paper. It is shown that presence of QD
in the channel causes a significant increase of current. Also, QD location and
concentration influence to the output characteristics of transistor was established.
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| ISSN: | 1560-8034 |