Model of heterotransistor with quantum dots
Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118231 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862593683187040256 |
|---|---|
| author | Timofeyev, V.I. Faleyeva, E.M. |
| author_facet | Timofeyev, V.I. Faleyeva, E.M. |
| citation_txt | Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Heterostructure transistors with quantum dots (QD) are now very perspective
devices because of their higher velocities of electrons in the channel. Simulation results
for concentration and carrier velocity distributions depending on the QD size,
concentration and location were presented in this paper. It is shown that presence of QD
in the channel causes a significant increase of current. Also, QD location and
concentration influence to the output characteristics of transistor was established.
|
| first_indexed | 2025-11-27T10:25:31Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118231 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T10:25:31Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Timofeyev, V.I. Faleyeva, E.M. 2017-05-29T13:19:43Z 2017-05-29T13:19:43Z 2010 Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 73.40.-c, 85.35.Be https://nasplib.isofts.kiev.ua/handle/123456789/118231 Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location were presented in this paper. It is shown that presence of QD
 in the channel causes a significant increase of current. Also, QD location and
 concentration influence to the output characteristics of transistor was established. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Model of heterotransistor with quantum dots Article published earlier |
| spellingShingle | Model of heterotransistor with quantum dots Timofeyev, V.I. Faleyeva, E.M. |
| title | Model of heterotransistor with quantum dots |
| title_full | Model of heterotransistor with quantum dots |
| title_fullStr | Model of heterotransistor with quantum dots |
| title_full_unstemmed | Model of heterotransistor with quantum dots |
| title_short | Model of heterotransistor with quantum dots |
| title_sort | model of heterotransistor with quantum dots |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118231 |
| work_keys_str_mv | AT timofeyevvi modelofheterotransistorwithquantumdots AT faleyevaem modelofheterotransistorwithquantumdots |