Model of heterotransistor with quantum dots

Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2010
Hauptverfasser: Timofeyev, V.I., Faleyeva, E.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118231
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862593683187040256
author Timofeyev, V.I.
Faleyeva, E.M.
author_facet Timofeyev, V.I.
Faleyeva, E.M.
citation_txt Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location were presented in this paper. It is shown that presence of QD
 in the channel causes a significant increase of current. Also, QD location and
 concentration influence to the output characteristics of transistor was established.
first_indexed 2025-11-27T10:25:31Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-118231
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-27T10:25:31Z
publishDate 2010
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Timofeyev, V.I.
Faleyeva, E.M.
2017-05-29T13:19:43Z
2017-05-29T13:19:43Z
2010
Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ.
1560-8034
PACS 73.40.-c, 85.35.Be
https://nasplib.isofts.kiev.ua/handle/123456789/118231
Heterostructure transistors with quantum dots (QD) are now very perspective
 devices because of their higher velocities of electrons in the channel. Simulation results
 for concentration and carrier velocity distributions depending on the QD size,
 concentration and location were presented in this paper. It is shown that presence of QD
 in the channel causes a significant increase of current. Also, QD location and
 concentration influence to the output characteristics of transistor was established.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Model of heterotransistor with quantum dots
Article
published earlier
spellingShingle Model of heterotransistor with quantum dots
Timofeyev, V.I.
Faleyeva, E.M.
title Model of heterotransistor with quantum dots
title_full Model of heterotransistor with quantum dots
title_fullStr Model of heterotransistor with quantum dots
title_full_unstemmed Model of heterotransistor with quantum dots
title_short Model of heterotransistor with quantum dots
title_sort model of heterotransistor with quantum dots
url https://nasplib.isofts.kiev.ua/handle/123456789/118231
work_keys_str_mv AT timofeyevvi modelofheterotransistorwithquantumdots
AT faleyevaem modelofheterotransistorwithquantumdots