Model of heterotransistor with quantum dots
Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this p...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118231 |
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Timofeyev, V.I. Faleyeva, E.M. 2017-05-29T13:19:43Z 2017-05-29T13:19:43Z 2010 Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 73.40.-c, 85.35.Be https://nasplib.isofts.kiev.ua/handle/123456789/118231 Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this paper. It is shown that presence of QD in the channel causes a significant increase of current. Also, QD location and concentration influence to the output characteristics of transistor was established. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Model of heterotransistor with quantum dots Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Model of heterotransistor with quantum dots |
| spellingShingle |
Model of heterotransistor with quantum dots Timofeyev, V.I. Faleyeva, E.M. |
| title_short |
Model of heterotransistor with quantum dots |
| title_full |
Model of heterotransistor with quantum dots |
| title_fullStr |
Model of heterotransistor with quantum dots |
| title_full_unstemmed |
Model of heterotransistor with quantum dots |
| title_sort |
model of heterotransistor with quantum dots |
| author |
Timofeyev, V.I. Faleyeva, E.M. |
| author_facet |
Timofeyev, V.I. Faleyeva, E.M. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Heterostructure transistors with quantum dots (QD) are now very perspective
devices because of their higher velocities of electrons in the channel. Simulation results
for concentration and carrier velocity distributions depending on the QD size,
concentration and location were presented in this paper. It is shown that presence of QD
in the channel causes a significant increase of current. Also, QD location and
concentration influence to the output characteristics of transistor was established.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118231 |
| citation_txt |
Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
| work_keys_str_mv |
AT timofeyevvi modelofheterotransistorwithquantumdots AT faleyevaem modelofheterotransistorwithquantumdots |
| first_indexed |
2025-11-27T10:25:31Z |
| last_indexed |
2025-11-27T10:25:31Z |
| _version_ |
1850852188164718592 |