Theory of relaxation for spontaneous emission of Bloch oscillation radiation
A theory for the spontaneous emission (SE) of radiation for a Bloch electron
 traversing a single energy miniband of a superlattice (SL) in a cavity while undergoing
 scattering is presented. The Bloch electron is accelerated under the influence of
 superimposed constant exte...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118233 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Theory of relaxation for spontaneous emission
 of Bloch oscillation radiation / V.N. Sokolov, G.J. Iafrate // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 109-129. — Бібліогр.: 52 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A theory for the spontaneous emission (SE) of radiation for a Bloch electron
traversing a single energy miniband of a superlattice (SL) in a cavity while undergoing
scattering is presented. The Bloch electron is accelerated under the influence of
superimposed constant external and internal inhomogeneous electric fields while
radiating into a microcavity. The constant external electric field strength is chosen so that
the emitted radiation lies in the terahertz spectral range. The quantum dynamics for the
inhomogeneous field correction is obtained from a Wigner–Weisskopf-like long-time,
time-dependent perturbation theory analysis based on the instantaneous eigenstates of the
electric field-dependent Bloch Hamiltonian. It is shown that SE for the cavity-enhanced
Bloch electron probability amplitude becomes damped and frequency shifted due to the
perturbing inhomogeneity. The developed general quantum approach is applied to the
case of elastic electron scattering due to SL interface roughness (SLIR). In the analysis,
the interface roughness effects are separated into contributions from independent planar
and cross-correlated neighboring planar interfaces; it is estimated that the crosscorrelated
contribution to the SE relaxation rate is relatively small compared to the
independent planar contribution. When analyzing the total emission power, it is shown
that the degradation effects from SLIR can be more than compensated for by the
enhancements derived from microcavity-based confinement tuning.
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| ISSN: | 1560-8034 |