Mechanisms of carrier transport in CdTe polycrystalline films
Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118236 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic
substrates by a modified close-spaced vapor transport technique have been investigated.
The as-grown films have columnar structure with the average grain sizes about 10 μm.
The in-plain direct current conductivity as a function of temperature and electric field has
been investigated. The percolation conductivity is shown to be dominant at low
temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an
activated process such as thermionic emission. The carrier transport across barriers is
influenced by traps in the surface barrier regions. The non-annealed films exhibited
stable electrical parameters and high photosensitivity during five-year storage under
laboratory conditions.
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| ISSN: | 1560-8034 |