Mechanisms of carrier transport in CdTe polycrystalline films

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Sukach, A.V., Tetyorkin, V.V., Krolevec, N.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118236
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.

Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic
 substrates by a modified close-spaced vapor transport technique have been investigated.
 The as-grown films have columnar structure with the average grain sizes about 10 μm.
 The in-plain direct current conductivity as a function of temperature and electric field has
 been investigated. The percolation conductivity is shown to be dominant at low
 temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an
 activated process such as thermionic emission. The carrier transport across barriers is
 influenced by traps in the surface barrier regions. The non-annealed films exhibited
 stable electrical parameters and high photosensitivity during five-year storage under
 laboratory conditions.