Mechanisms of carrier transport in CdTe polycrystalline films

Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2010
Main Authors: Sukach, A.V., Tetyorkin, V.V., Krolevec, N.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118236
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118236
record_format dspace
spelling Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
2017-05-29T13:33:28Z
2017-05-29T13:33:28Z
2010
Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.
1560-8034
PACS 78.30.L
https://nasplib.isofts.kiev.ua/handle/123456789/118236
Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Mechanisms of carrier transport in CdTe polycrystalline films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Mechanisms of carrier transport in CdTe polycrystalline films
spellingShingle Mechanisms of carrier transport in CdTe polycrystalline films
Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
title_short Mechanisms of carrier transport in CdTe polycrystalline films
title_full Mechanisms of carrier transport in CdTe polycrystalline films
title_fullStr Mechanisms of carrier transport in CdTe polycrystalline films
title_full_unstemmed Mechanisms of carrier transport in CdTe polycrystalline films
title_sort mechanisms of carrier transport in cdte polycrystalline films
author Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
author_facet Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
publishDate 2010
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118236
citation_txt Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.
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first_indexed 2025-12-07T13:25:11Z
last_indexed 2025-12-07T13:25:11Z
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