Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
Structural changes in silicon single crystals irradiated with high-energy
 electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve
 behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal
 space maps (HR-RSMs) w...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118237 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural changes in Cz-Si single crystals
 irradiated with high-energy electrons
 from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862589564705570816 |
|---|---|
| author | Fodchuk, І.М. Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. |
| author_facet | Fodchuk, І.М. Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. |
| citation_txt | Structural changes in Cz-Si single crystals
 irradiated with high-energy electrons
 from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Structural changes in silicon single crystals irradiated with high-energy
electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve
behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal
space maps (HR-RSMs) were found as a function of the radiation dose. The generalized
dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types
(spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface
layer was used for explanation.
|
| first_indexed | 2025-11-27T03:08:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118237 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T03:08:32Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Fodchuk, І.М. Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. 2017-05-29T13:35:02Z 2017-05-29T13:35:02Z 2010 Structural changes in Cz-Si single crystals
 irradiated with high-energy electrons
 from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln https://nasplib.isofts.kiev.ua/handle/123456789/118237 Structural changes in silicon single crystals irradiated with high-energy
 electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve
 behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal
 space maps (HR-RSMs) were found as a function of the radiation dose. The generalized
 dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types
 (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface
 layer was used for explanation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry Article published earlier |
| spellingShingle | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry Fodchuk, І.М. Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. |
| title | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry |
| title_full | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry |
| title_fullStr | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry |
| title_full_unstemmed | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry |
| title_short | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry |
| title_sort | structural changes in cz-si single crystals irradiated with high-energy electrons from data of high-resolution x-ray diffractometry |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118237 |
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