Impurity scattering of band carriers
Mobility of band carriers scattered on donors, partially ionized, partially
 neutral, at low temperatures, is considered in general and calculated for AIII-BV group
 crystals. It is shown that temperature dependence of mobility is determined by
 relationship between number of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118238 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862625143566630912 |
|---|---|
| author | Boiko, I.I. |
| author_facet | Boiko, I.I. |
| citation_txt | Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Mobility of band carriers scattered on donors, partially ionized, partially
neutral, at low temperatures, is considered in general and calculated for AIII-BV group
crystals. It is shown that temperature dependence of mobility is determined by
relationship between number of ionized and neutral donors and by average energy of
electrons.
|
| first_indexed | 2025-12-07T13:33:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118238 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:33:57Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boiko, I.I. 2017-05-29T13:36:52Z 2017-05-29T13:36:52Z 2010 Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 71.20. 72.20 Dp https://nasplib.isofts.kiev.ua/handle/123456789/118238 Mobility of band carriers scattered on donors, partially ionized, partially
 neutral, at low temperatures, is considered in general and calculated for AIII-BV group
 crystals. It is shown that temperature dependence of mobility is determined by
 relationship between number of ionized and neutral donors and by average energy of
 electrons. The essential help of Dr. E. B. Kaganovich is
 gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Impurity scattering of band carriers Article published earlier |
| spellingShingle | Impurity scattering of band carriers Boiko, I.I. |
| title | Impurity scattering of band carriers |
| title_full | Impurity scattering of band carriers |
| title_fullStr | Impurity scattering of band carriers |
| title_full_unstemmed | Impurity scattering of band carriers |
| title_short | Impurity scattering of band carriers |
| title_sort | impurity scattering of band carriers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118238 |
| work_keys_str_mv | AT boikoii impurityscatteringofbandcarriers |