Impurity scattering of band carriers
Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral don...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118238 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118238 |
|---|---|
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dspace |
| spelling |
Boiko, I.I. 2017-05-29T13:36:52Z 2017-05-29T13:36:52Z 2010 Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 71.20. 72.20 Dp https://nasplib.isofts.kiev.ua/handle/123456789/118238 Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral donors and by average energy of electrons. The essential help of Dr. E. B. Kaganovich is gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Impurity scattering of band carriers Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Impurity scattering of band carriers |
| spellingShingle |
Impurity scattering of band carriers Boiko, I.I. |
| title_short |
Impurity scattering of band carriers |
| title_full |
Impurity scattering of band carriers |
| title_fullStr |
Impurity scattering of band carriers |
| title_full_unstemmed |
Impurity scattering of band carriers |
| title_sort |
impurity scattering of band carriers |
| author |
Boiko, I.I. |
| author_facet |
Boiko, I.I. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Mobility of band carriers scattered on donors, partially ionized, partially
neutral, at low temperatures, is considered in general and calculated for AIII-BV group
crystals. It is shown that temperature dependence of mobility is determined by
relationship between number of ionized and neutral donors and by average energy of
electrons.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118238 |
| citation_txt |
Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ. |
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AT boikoii impurityscatteringofbandcarriers |
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2025-12-07T13:33:57Z |
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2025-12-07T13:33:57Z |
| _version_ |
1850856636771467264 |