Impurity scattering of band carriers

Impurity scattering of band carriers

Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral don...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2010
1. Verfasser:	Boiko, I.I.
Format:	Artikel
Sprache:	English
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118238
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ.

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