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Impurity scattering of band carriers

Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral don...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2010
Main Author:	Boiko, I.I.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118238
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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