Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields

Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in the framework of the effective mass approximation and two-band model. Illustra...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2012
Автори: Taqi, A., Diouri, J.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118239
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 21-25. — Бібліогр.: 10 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118239
record_format dspace
spelling Taqi, A.
Diouri, J.
2017-05-29T13:41:39Z
2017-05-29T13:41:39Z
2012
Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 21-25. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 71.15.Nc, 71.35.-y, 73.21.Fg
https://nasplib.isofts.kiev.ua/handle/123456789/118239
Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in the framework of the effective mass approximation and two-band model. Illustrations have been given for GaAlAsGaAs-GaAlAs and CdMnTe-CdTe-CdMnTe parabolic quantum wells. The comparison with existing data displays good agreement.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
spellingShingle Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
Taqi, A.
Diouri, J.
title_short Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
title_full Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
title_fullStr Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
title_full_unstemmed Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
title_sort binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
author Taqi, A.
Diouri, J.
author_facet Taqi, A.
Diouri, J.
publishDate 2012
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in the framework of the effective mass approximation and two-band model. Illustrations have been given for GaAlAsGaAs-GaAlAs and CdMnTe-CdTe-CdMnTe parabolic quantum wells. The comparison with existing data displays good agreement.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118239
citation_txt Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 21-25. — Бібліогр.: 10 назв. — англ.
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