Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasse...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118244 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of valence band formation
 in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862644965619793920 |
|---|---|
| author | Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| author_facet | Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| citation_txt | Peculiarities of valence band formation
 in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe₁₋x and AsxGe₁₋x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-GE and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with covalent bonds.
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| first_indexed | 2025-12-01T10:02:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118244 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T10:02:35Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. 2017-05-29T13:49:02Z 2017-05-29T13:49:02Z 2012 Peculiarities of valence band formation
 in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.43.Fs, 71.23.Cq https://nasplib.isofts.kiev.ua/handle/123456789/118244 Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe₁₋x and AsxGe₁₋x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-GE and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with covalent bonds. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of valence band formation in As-Ge-Se semiconductor glasses Article published earlier |
| spellingShingle | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| title | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_full | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_fullStr | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_full_unstemmed | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_short | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_sort | peculiarities of valence band formation in as-ge-se semiconductor glasses |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118244 |
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