Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasse...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2012 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118244 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. |
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Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. 2017-05-29T13:49:02Z 2017-05-29T13:49:02Z 2012 Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.43.Fs, 71.23.Cq https://nasplib.isofts.kiev.ua/handle/123456789/118244 Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe₁₋x and AsxGe₁₋x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-GE and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with covalent bonds. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of valence band formation in As-Ge-Se semiconductor glasses Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| spellingShingle |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| title_short |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_full |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_fullStr |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_full_unstemmed |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses |
| title_sort |
peculiarities of valence band formation in as-ge-se semiconductor glasses |
| author |
Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| author_facet |
Vakiv, M. Golovchak, R. Chalyy, D. Shpotyuk, M. Ubizskii, S. Shpotyuk, O. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe₁₋x and AsxGe₁₋x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-GE and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with covalent bonds.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118244 |
| citation_txt |
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-12-01T10:02:35Z |
| last_indexed |
2025-12-01T10:02:35Z |
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