Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasse...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118244 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ. |