Peculiarities of valence band formation in As-Ge-Se semiconductor glasses

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118244
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Peculiarities of valence band formation
 in As-Ge-Se semiconductor glasses / M. Vakiv, R. Golovchak, D. Chalyy, M. Shpotyuk, S. Ubizskii, O. Shpotyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 32-34. — Бібліогр.: 16 назв. — англ.

Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasse...