APA (7th ed.) Citation

Sghaier, H., Bouzaiene, L., Sfaxi, L., & Maaref, H. (2012). A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Sghaier, H., L. Bouzaiene, L. Sfaxi, and H. Maaref. "A Novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs Quantum Well Hall Device Grown on (111) GaAs." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.

MLA (8th ed.) Citation

Sghaier, H., et al. "A Novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs Quantum Well Hall Device Grown on (111) GaAs." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.

Warning: These citations may not always be 100% accurate.