A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall dev...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118246 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this study, we look at the advantages of (111) GaAs substrate over (001)
one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
we suggest a new quantum well structure for a Hall device grown on (111) GaAs
substrate, with the objective of improving its performances. From self-consistent
calculations, we find that the electron concentration ns in the interface region is
enhanced. This implies that one can have a wider spacer layer and still have the same ns
with the result that the mobility is improved. This result should be valuable for many
types of devices. We specifically consider Hall sensors, where it is desirable to have a
low electron concentration and high mobility.
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| ISSN: | 1560-8034 |