A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автори: Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118246
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ.

In this study, we look at the advantages of (111) GaAs substrate over (001)
 one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
 of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
 we suggest a new quantum well structure for a Hall device grown on (111) GaAs
 substrate, with the objective of improving its performances. From self-consistent
 calculations, we find that the electron concentration ns in the interface region is
 enhanced. This implies that one can have a wider spacer layer and still have the same ns
 with the result that the mobility is improved. This result should be valuable for many
 types of devices. We specifically consider Hall sensors, where it is desirable to have a
 low electron concentration and high mobility.