A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
In this study, we look at the advantages of (111) GaAs substrate over (001)
 one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
 of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
 we suggest a new quantum well...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118246 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862619051543494656 |
|---|---|
| author | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| author_facet | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| citation_txt | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this study, we look at the advantages of (111) GaAs substrate over (001)
one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
we suggest a new quantum well structure for a Hall device grown on (111) GaAs
substrate, with the objective of improving its performances. From self-consistent
calculations, we find that the electron concentration ns in the interface region is
enhanced. This implies that one can have a wider spacer layer and still have the same ns
with the result that the mobility is improved. This result should be valuable for many
types of devices. We specifically consider Hall sensors, where it is desirable to have a
low electron concentration and high mobility.
|
| first_indexed | 2025-12-07T13:17:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118246 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:17:03Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. 2017-05-29T13:55:52Z 2017-05-29T13:55:52Z 2012 A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 53.50.Td, 71.76, 72.80.Ey, 85.30.De, 85.30.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118246 In this study, we look at the advantages of (111) GaAs substrate over (001)
 one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
 of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
 we suggest a new quantum well structure for a Hall device grown on (111) GaAs
 substrate, with the objective of improving its performances. From self-consistent
 calculations, we find that the electron concentration ns in the interface region is
 enhanced. This implies that one can have a wider spacer layer and still have the same ns
 with the result that the mobility is improved. This result should be valuable for many
 types of devices. We specifically consider Hall sensors, where it is desirable to have a
 low electron concentration and high mobility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs Article published earlier |
| spellingShingle | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| title | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_full | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_fullStr | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_full_unstemmed | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_short | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_sort | novel al₀.₃₃ga₀.₆₇as/in₀.₁₅ga₀.₈₅as/gaas quantum well hall device grown on (111) gaas |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118246 |
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