A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall dev...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118246 |
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| Zitieren: | A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. |
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Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. 2017-05-29T13:55:52Z 2017-05-29T13:55:52Z 2012 A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 53.50.Td, 71.76, 72.80.Ey, 85.30.De, 85.30.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118246 In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall device grown on (111) GaAs substrate, with the objective of improving its performances. From self-consistent calculations, we find that the electron concentration ns in the interface region is enhanced. This implies that one can have a wider spacer layer and still have the same ns with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors, where it is desirable to have a low electron concentration and high mobility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| spellingShingle |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| title_short |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_full |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_fullStr |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_full_unstemmed |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs |
| title_sort |
novel al₀.₃₃ga₀.₆₇as/in₀.₁₅ga₀.₈₅as/gaas quantum well hall device grown on (111) gaas |
| author |
Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| author_facet |
Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this study, we look at the advantages of (111) GaAs substrate over (001)
one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and
we suggest a new quantum well structure for a Hall device grown on (111) GaAs
substrate, with the objective of improving its performances. From self-consistent
calculations, we find that the electron concentration ns in the interface region is
enhanced. This implies that one can have a wider spacer layer and still have the same ns
with the result that the mobility is improved. This result should be valuable for many
types of devices. We specifically consider Hall sensors, where it is desirable to have a
low electron concentration and high mobility.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118246 |
| citation_txt |
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. |
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| first_indexed |
2025-12-07T13:17:03Z |
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2025-12-07T13:17:03Z |
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