A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118246
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ.

In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall dev...