Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer w...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118249 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of InS-InSe heterojunctions
 prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862723143648411648 |
|---|---|
| author | Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. |
| author_facet | Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. |
| citation_txt | Investigation of InS-InSe heterojunctions
 prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.
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| first_indexed | 2025-12-07T18:40:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118249 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:40:23Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. 2017-05-29T13:57:26Z 2017-05-29T13:57:26Z 2012 Investigation of InS-InSe heterojunctions
 prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 73.40.Lq https://nasplib.isofts.kiev.ua/handle/123456789/118249 n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe Article published earlier |
| spellingShingle | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. |
| title | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_full | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_fullStr | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_full_unstemmed | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_short | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_sort | investigation of ins-inse heterojunctions prepared using sulphurization of p-inse |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118249 |
| work_keys_str_mv | AT kovalyukzd investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse AT duplavyyvy investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse AT sydorom investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse |