Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory
We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resul...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2013 |
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| Sprache: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2013. — Т. 39, № 3. — С. 384–389. — Бібліогр.: 24 назв. — англ. |
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Khotkevych, N.V. Kolesnichenko, Yu.A. van Ruitenbeek, J.M. 2017-05-29T14:01:47Z 2017-05-29T14:01:47Z 2013 Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2013. — Т. 39, № 3. — С. 384–389. — Бібліогр.: 24 назв. — англ. 0132-6414 PACS: 74.55.+v, 85.30.Hi, 73.50.–h https://nasplib.isofts.kiev.ua/handle/123456789/118250 We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering by a single defect in the vicinity of the surface is analyzed. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур К 75-летию со дня рождения И. К. Янсона Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory |
| spellingShingle |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory Khotkevych, N.V. Kolesnichenko, Yu.A. van Ruitenbeek, J.M. К 75-летию со дня рождения И. К. Янсона |
| title_short |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory |
| title_full |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory |
| title_fullStr |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory |
| title_full_unstemmed |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory |
| title_sort |
electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and stm theory |
| author |
Khotkevych, N.V. Kolesnichenko, Yu.A. van Ruitenbeek, J.M. |
| author_facet |
Khotkevych, N.V. Kolesnichenko, Yu.A. van Ruitenbeek, J.M. |
| topic |
К 75-летию со дня рождения И. К. Янсона |
| topic_facet |
К 75-летию со дня рождения И. К. Янсона |
| publishDate |
2013 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface
states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the
charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering
by a single defect in the vicinity of the surface is analyzed.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118250 |
| citation_txt |
Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2013. — Т. 39, № 3. — С. 384–389. — Бібліогр.: 24 назв. — англ. |
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| first_indexed |
2025-12-07T20:50:59Z |
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2025-12-07T20:50:59Z |
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