Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118251
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ.

The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity.