Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118251 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. |
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Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. 2017-05-29T14:02:48Z 2017-05-29T14:02:48Z 2012 Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 73.40.Gk, Lq; 73.61.Ga https://nasplib.isofts.kiev.ua/handle/123456789/118251 The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| spellingShingle |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| title_short |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_full |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_fullStr |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_full_unstemmed |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_sort |
influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure cds-cu₂s |
| author |
Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| author_facet |
Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S
heterostructure both at direct and alternative current strongly depends on barrier
parameters that can change under exposure. It was stated that such parameter as
resistance of space charge region considerably depends on its width at a constant barrier
height, and this dependence is similar to linear shape. This behavior can indicate
domination of tunnel multistep mechanisms in the studied structure, for instance, the
mechanism of tunnel-jumping conductivity.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118251 |
| citation_txt |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. |
| work_keys_str_mv |
AT borschakva influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s AT brytavskyiiev influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s AT smyntynava influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s AT lepikhyai influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s AT balabanap influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s AT zatovskayanp influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s |
| first_indexed |
2025-12-07T13:16:22Z |
| last_indexed |
2025-12-07T13:16:22Z |
| _version_ |
1850855530310926338 |