Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S
 heterostructure both at direct and alternative current strongly depends on barrier
 parameters that can change under exposure. It was stated that such parameter as
 resistance of space charge region con...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118251 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862619051954536448 |
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| author | Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| author_facet | Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| citation_txt | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S
heterostructure both at direct and alternative current strongly depends on barrier
parameters that can change under exposure. It was stated that such parameter as
resistance of space charge region considerably depends on its width at a constant barrier
height, and this dependence is similar to linear shape. This behavior can indicate
domination of tunnel multistep mechanisms in the studied structure, for instance, the
mechanism of tunnel-jumping conductivity.
|
| first_indexed | 2025-12-07T13:16:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118251 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:16:22Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. 2017-05-29T14:02:48Z 2017-05-29T14:02:48Z 2012 Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 73.40.Gk, Lq; 73.61.Ga https://nasplib.isofts.kiev.ua/handle/123456789/118251 The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S
 heterostructure both at direct and alternative current strongly depends on barrier
 parameters that can change under exposure. It was stated that such parameter as
 resistance of space charge region considerably depends on its width at a constant barrier
 height, and this dependence is similar to linear shape. This behavior can indicate
 domination of tunnel multistep mechanisms in the studied structure, for instance, the
 mechanism of tunnel-jumping conductivity. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S Article published earlier |
| spellingShingle | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
| title | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_full | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_fullStr | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_full_unstemmed | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_short | Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S |
| title_sort | influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure cds-cu₂s |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118251 |
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