Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118251
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ.

The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S
 heterostructure both at direct and alternative current strongly depends on barrier
 parameters that can change under exposure. It was stated that such parameter as
 resistance of space charge region con...