Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автор: Gomeniuk, Yu.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118255
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ.

Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor