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Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon syst...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2012
Main Author:	Gomeniuk, Yu.V.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118255
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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