Bacherikov, Y., Boltovets, N., Konakova, R., Kolyadina, E., Ledn’ova, T., & Okhrimenko, O. (2012). Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Bacherikov, Yu.Yu, N.S Boltovets, R.V Konakova, E.Yu Kolyadina, T.M Ledn’ova, та O.B Okhrimenko. "Interface Features of SiO₂/SiC Heterostructures According to Methods for Producing the SiO₂ Thin Films." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.
Стиль цитування MLA (8-ме видання)Bacherikov, Yu.Yu, et al. "Interface Features of SiO₂/SiC Heterostructures According to Methods for Producing the SiO₂ Thin Films." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.