Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
In this work, we studied comparative characteristics of the SiO₂/SiC
 heterostructures. The following two techniques were used for SiO₂ formation: thermal
 oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
 results obtained from optical ab...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118258 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this work, we studied comparative characteristics of the SiO₂/SiC
heterostructures. The following two techniques were used for SiO₂ formation: thermal
oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
results obtained from optical absorption and photoluminescence spectra as well as from
measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films
prepared using the technique (ii) possess SiO₂/SiC interface with a less number of
defective states than that for SiO₂ films prepared using the technique (i).
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| ISSN: | 1560-8034 |