Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). According to experimental results obtained from optical absorption and photolumine...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118258 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118258 |
|---|---|
| record_format |
dspace |
| spelling |
Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. 2017-05-29T14:13:16Z 2017-05-29T14:13:16Z 2012 Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 07.10.Lw, 81.10.Bk, Dn, 77.84.Bw, 78.40, 78.55, 81.16.Pr https://nasplib.isofts.kiev.ua/handle/123456789/118258 In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). According to experimental results obtained from optical absorption and photoluminescence spectra as well as from measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films prepared using the technique (ii) possess SiO₂/SiC interface with a less number of defective states than that for SiO₂ films prepared using the technique (i). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| spellingShingle |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| title_short |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_full |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_fullStr |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_full_unstemmed |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_sort |
interface features of sio₂/sic heterostructures according to methods for producing the sio₂ thin films |
| author |
Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| author_facet |
Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, we studied comparative characteristics of the SiO₂/SiC
heterostructures. The following two techniques were used for SiO₂ formation: thermal
oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
results obtained from optical absorption and photoluminescence spectra as well as from
measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films
prepared using the technique (ii) possess SiO₂/SiC interface with a less number of
defective states than that for SiO₂ films prepared using the technique (i).
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118258 |
| citation_txt |
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT bacherikovyuyu interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT boltovetsns interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT konakovarv interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT kolyadinaeyu interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT lednovatm interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT okhrimenkoob interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms |
| first_indexed |
2025-12-07T13:29:34Z |
| last_indexed |
2025-12-07T13:29:34Z |
| _version_ |
1850856360472739840 |