Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
In this work, we studied comparative characteristics of the SiO₂/SiC
 heterostructures. The following two techniques were used for SiO₂ formation: thermal
 oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
 results obtained from optical ab...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118258 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862623383292739584 |
|---|---|
| author | Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| author_facet | Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| citation_txt | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, we studied comparative characteristics of the SiO₂/SiC
heterostructures. The following two techniques were used for SiO₂ formation: thermal
oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
results obtained from optical absorption and photoluminescence spectra as well as from
measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films
prepared using the technique (ii) possess SiO₂/SiC interface with a less number of
defective states than that for SiO₂ films prepared using the technique (i).
|
| first_indexed | 2025-12-07T13:29:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118258 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:29:34Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. 2017-05-29T14:13:16Z 2017-05-29T14:13:16Z 2012 Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 07.10.Lw, 81.10.Bk, Dn, 77.84.Bw, 78.40, 78.55, 81.16.Pr https://nasplib.isofts.kiev.ua/handle/123456789/118258 In this work, we studied comparative characteristics of the SiO₂/SiC
 heterostructures. The following two techniques were used for SiO₂ formation: thermal
 oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
 results obtained from optical absorption and photoluminescence spectra as well as from
 measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films
 prepared using the technique (ii) possess SiO₂/SiC interface with a less number of
 defective states than that for SiO₂ films prepared using the technique (i). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films Article published earlier |
| spellingShingle | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films Bacherikov, Yu.Yu. Boltovets, N.S. Konakova, R.V. Kolyadina, E.Yu. Ledn’ova, T.M. Okhrimenko, O.B. |
| title | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_full | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_fullStr | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_full_unstemmed | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_short | Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films |
| title_sort | interface features of sio₂/sic heterostructures according to methods for producing the sio₂ thin films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118258 |
| work_keys_str_mv | AT bacherikovyuyu interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT boltovetsns interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT konakovarv interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT kolyadinaeyu interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT lednovatm interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms AT okhrimenkoob interfacefeaturesofsio2sicheterostructuresaccordingtomethodsforproducingthesio2thinfilms |