Phase diagrams of Si₁-xGex solid solution: a theoretical approach
In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting elemen...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118268 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. |
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Jivani, A.R. Jani, A.R. 2017-05-29T14:31:48Z 2017-05-29T14:31:48Z 2012 Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 64.70.kg, 64.75.Nx, 71.15.Nc, Dx https://nasplib.isofts.kiev.ua/handle/123456789/118268 In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data. A.R. Jivani thanks University Grants Commission, New Delhi, India, for financial support (Grant No. 47- 625/08(WRO)) to carry out this research work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Phase diagrams of Si₁-xGex solid solution: a theoretical approach Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
| spellingShingle |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach Jivani, A.R. Jani, A.R. |
| title_short |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
| title_full |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
| title_fullStr |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
| title_full_unstemmed |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
| title_sort |
phase diagrams of si₁-xgex solid solution: a theoretical approach |
| author |
Jivani, A.R. Jani, A.R. |
| author_facet |
Jivani, A.R. Jani, A.R. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, we have used the pseudo-alloy atom model and higher-order
perturbation theory based on pseudopotential approach to investigate phase diagram at
different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic)
concentration of the second constituting element. We have also investigated the phase
diagram near the melting temperature as well as at low temperatures and compared with
the available experimental results. Our calculated phase diagram near the melting point
agrees well with the experimental data.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118268 |
| citation_txt |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT jivaniar phasediagramsofsi1xgexsolidsolutionatheoreticalapproach AT janiar phasediagramsofsi1xgexsolidsolutionatheoreticalapproach |
| first_indexed |
2025-12-02T04:16:42Z |
| last_indexed |
2025-12-02T04:16:42Z |
| _version_ |
1850861568869269504 |