Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics

• Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• ISSN: 1560-8034
• Автори: Osinsky, V.I., Masol, I.V., Lyahova, N.N., Deminsky, P.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118271
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ.

Discussed in this paper are options for replacing the virtual structure of SiC
 atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
 epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
 the role of precursors in the way of reducing the formation temperature for stable phases
 of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of
 carbon atoms. The dependence on preparation conditions for the aluminum single
 oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal
 structure on the state of the single oxycarbide crystal structure was determined. The
 semiconductor AlNOC has been experimentally obtained.